issue 2 - february 2008 1 www.zetex.com ? zetex semiconductors plc 2008 zxmn3f30fh 30v sot23 n-channel enhancement mode mosfet summary description this new generation trench mosfet from zetex features low on- resistance achievable with 4.5v gate drive. features ? low on-resistance ? 4.5v gate drive capability ?sot23 applications ? dc-dc converters ? power management functions ? motor control ordering information device marking kna v (br)dss r ds(on) ( ) i d (a) 30 0.047 @ v gs = 10v 4.6 0.065 @ v gs = 4.5v 4.0 device reel size (inches) tape width (mm) quantity per reel ZXMN3F30FHTA 7 8 3000 d s g d top view s g
zxmn3f30fh issue 2 - february 2008 2 www.zetex.com ? zetex semiconductors plc 2008 absolute maximum ratings thermal resistance notes: (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 5 sec. (c) repetitive rating - 25mm x 25mm fr4 pcb, d=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. (d) thermal resistance from junction to solder-point (at the end of the drain lead). parameter symbol limit unit drain source voltage v dss 30 v gate source voltage v gs 20 v continous drain current @ v gs =4.5; t a =25 c (b) @ v gs =4.5; t a =70 c (b) @ v gs =4.5; t a =25 c (a) i d 4.6 3.7 3.8 a a a pulsed drain current (c) i dm 21 a continuous source current (body diode) (b) i s 2.2 a pulsed source current (body diode) (c) i sm 21 a power dissipation at t a =25 c (a) linear derating factor p d 0.95 7.6 w mw/ c power dissipation at t a =25 c (b) linear derating factor p d 1.4 11.2 w mw/ c operating and storage temperature range t j , t stg -55 to 150 c parameter symbol limit unit junction to ambient (a) r ja 131 c/w junction to ambient (b) r ja 89 c/w junction to lead (d) r jl 68 c/w
zxmn3f30fh issue 2 - february 2008 3 www.zetex.com ? zetex semiconductors plc 2008 thermal characteristics
zxmn3f30fh issue 2 - february 2008 4 www.zetex.com ? zetex semiconductors plc 2008 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 30 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 0.5 av ds = 30v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. r ds(on) 0.047 0.065 v gs = 10v, i d = 3.2a v gs = 4.5v, i d = 2.8a forward transconductance (*)(?) g fs 5.2 s v ds = 15v, i d = 2.5a dynamic (?) (?) for design aid only, not subject to production testing. input capacitance c iss 318 pf v ds = 15v, v gs =0v f=1mhz output capacitance c oss 75 pf reverse transfer capacitance c rss 45 pf switching (?) (?) (?) switching characteristics are independ ent of operating junction temperature. turn-on-delay time t d(on) 1.6 ns v dd = 15v, v gs = 10v i d = 1a r g 6.0 rise time t r 2.6 ns turn-off delay time t d(off) 17 ns fall time t f 9.3 ns total gatecharge q g 7.7 nc v ds = 15v, v gs = 10v i d = 2.5a gate-source charge q gs 1nc gate-drain charge q gd 1.8 nc source-drain diode diode forward voltage (*) v sd 0.73 1.2 v i s = 1.25a, v gs =0v reverse recovery time (?) t rr 12 ns t j =25 o c, i f =1.6a di/dt=100a/ s reverse recovery charge (?) q rr 4.8 nc
zxmn3f30fh issue 2 - february 2008 5 www.zetex.com ? zetex semiconductors plc 2008 typical characteristics
zxmn3f30fh issue 2 - february 2008 6 www.zetex.com ? zetex semiconductors plc 2008 typical characteristics test circuits
zxmn3f30fh issue 2 - february 2008 7 www.zetex.com ? zetex semiconductors plc 2008 package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. min. max. a - 1.12 - 0.044 e1 1.90 nom 0.075 nom a1 0.01 0.10 0.0004 0.004 e 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 e1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 l 0.25 0.60 0.0098 0.0236 d 2.80 3.04 0.110 0.120 l1 0.45 0.62 0.018 0.024 e0.95 nom0.037 nom----- e e l e1 d a c e1 l1 a1 b 3 leads
zxmn3f30fh issue 2 - february 2008 8 www.zetex.com ? zetex semiconductors plc 2008 zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com ? 2008 published by zetex semiconductors plc definitions product change zetex semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. customers are solely responsible for obtaining th e latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as desi gn ideas. it is the responsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warranty is given and no liability whatsoev er is assumed by zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of th ese circuit applications, under any circumstances. life support zetex products are specifically not authorized for use as critic al components in life support devices or systems without the ex press written approval of the chief executive officer of zetex semiconductors plc. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in t he labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devi ce or system whose failure to pe rform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. reproduction the product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the pr oducts or services concerned. terms and conditions all products are sold subjects to zetex? terms and conditions of sale, and this disclaimer (save in the event of a conflict bet ween the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. for the latest information on technology, delivery terms and condi tions and prices, please contact your nearest zetex sales off ice. quality of product zetex is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts dire ctly from zetex semiconductors or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork zetex semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitab le precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. the extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. devices suspected of being affected should be replaced. green compliance zetex semiconductors is committed to environ mental excellence in all aspects of its op erations which includes meeting or exceed ing reg- ulatory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to red uce the use of hazardous substances and/or emissions. all zetex components are compliant with the ro hs directive, and through this it is supporting its customers in their compliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice.
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